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Part Number = NJW1302

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20349 Qualification of Niigata Fab (Japan) as the additional wafer source for Bipolar Power Planar Transistors. 2014-06-20 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION View PDF
20349 Qualify Niigata FAB (Japan) for Bipolar Power Planar, BPT and GPT 2014-01-24 INITIAL PRODUCT/PROCESS CHANGE NOTIFICATION View PDF
16477 Final Notification for Transfer of the Low Voltage Bipolar Planar and EMI Filters from ON Semiconductor ZR Fab in Phoenix (USA) to ON Semiconductor ISMF Fab in Seremban (Malaysia) 2010-06-09 UPDATE NOTIFICATION View PDF
16477 Final Notification for Transfer of the Low Voltage Bipolar Planar and EMI Filters from ON Semiconductor ZR Fab in Phoenix (USA) to ON Semiconductor ISMF Fab in Seremban (Malaysia) 2010-06-02 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION View PDF
16250 Initial Notification of Transfer of EMI Filters, Bidirectional ESD Diodes, Bipolar Power, Bidirectional TVS (Transient Voltage Suppressor) Diodes, TVS (Transient Voltage Suppressor) Arrays, Small Signal Schottky, Ultrafast Rectifier and Thyristor Surge Protection Devices (TSPD) products from ON Semiconductor ZR Fab in Phoenix (USA) to ON Semiconductor ISMF Fab in Seremban (Malaysia) 2009-04-29 INITIAL PRODUCT/PROCESS CHANGE NOTIFICATION View PDF
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