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Уведомление об обновлениях схем

Change Notification #   10272
Revision  
Type of Notification   PRODUCT/PROCESS CHANGE NOTIFICATION
Change Title   High Speed CMOS Conversion of ILD to BPSG
Issue Date   2000-09-22
Affected Product Family   LOGIC
Description   ON Semiconductor High Speed CMOS Logic devices, processed at Phenitec Semiconductor Inc., will convert the ILD (Interlayer Dielectric) between metal and polysilicon from 9000A, using 5.7 Wtpercent Phosphorous PSG film to 2000A NSG plus 7000A, using 3.0 Wtpercent Boron and 5.0 Wtpercent Phosphorous (BPSG film). The present thermal reflow process will remain unchanged and electrical characteristics of the die will not change. The BPSG film provides superior sidewall coverage between the metal and the polysilicon conductors over the existing PSG film. BPSG processes have been in production at multiple ON Semiconductor wafer fabrication sites since the early 1980's.Boron in the BPSG film reduces stress which provides a more conformal film than PSG. Improved reliability is achieved by reduction in cracking and metal to poly shorts. These changes to HSL products are being made as part of ON Semiconductor's continuous improvement philosophy for product quality and reliability.
Key Items Affected by Change   SUBCONTRACTOR FAB SITE,WAFER PROCESS
 
Key Milestones  
Effective Date:   2000-12-29
Sample Info:   Contact your local ON Semiconductor Sales Office.
Possible Replacements   N/A

For more information on this Process Change Notification, please contact your local ON Semiconductor sales office.

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