CPH5871: Power MOSFET, 30V, 52mΩ, 3.5A, Single N-Channel, with Schottky Diode
Описание продукта
CPH5871 is a Power MOSFET, 30V, 52mΩ, 3.5A, Single N-Channel, with Schottky Diode for General-Purpose Switching Device Application.
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Отличительные черты |
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Benefits |
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Pb-Free, Halogen-Free and RoHS Compliance
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Environmental consideration
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ESD Diode - Protected Gate
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MOSFET is High-speed switching, 1.8V drive
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Reduces dynamic power losses, Drive at low voltage
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Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package. facilitating high-density mounting.
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SBD is Short reverse recovery time, Low forward voltage
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CPH5871-TL-H
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Active
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Power MOSFET, 30V, 52mΩ, 3.5A, Single N-Channel, with Schottky Diode
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N-Channel |
with Schottky Diode |
30 |
12 |
1.3 |
3.5 |
0.9  |
74 |
52 |
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4.7 |
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1.1 |
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430  |
59  |
38  |
CPH-5 |
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CPH5871-TL-W
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Product Preview
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Power MOSFET, 30V, 52mΩ, 3.5A, Single N-Channel, with Schottky Diode
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N-Channel |
with Schottky Diode |
30 |
12 |
1.3 |
3.5 |
0.9  |
74 |
52 |
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4.7 |
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1.1 |
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430  |
59  |
38  |
CPH-5 |
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Новые микросхемы |
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Power GaN Cascode Transistor, 600 V, 290 mΩ Single N-Channel
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NTP8G206N
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Power GaN Cascode Transistor, 600 V, 150 mΩ Single N-Channel
- Fast switching
- Extremely low Qrr
- High efficiencies
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Инженерная поддержка проектов |
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