EMH2801: P-Channel Power MOSFET, -20V, -3A, 85mΩ, Single EMH8 with Schottky Diode
Описание продукта
EMH2801 is a P-Channel Power MOSFET, -20V, -3A, 85mΩ, Single EMH8 with Schottky Diode for General-Purpose Switching Device Applications.
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Отличительные черты |
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Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting
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MOSFET : Low ON-resistance
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SBD : Small switching noise
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SBD : Low forward voltage (IF = 2.0A, VF max = 0.46V)
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Новые микросхемы |
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NTP8G202N
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Power GaN Cascode Transistor, 600 V, 290 mΩ Single N-Channel
- Fast switching
- Extremely low Qrr
- High efficiencies
NDBA100N10B
NDPL100N10B
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Power N-Channel MOSFETs, 100 V, 100 A
- Low on-resistance as low as 6.9 mΩ
- Low gate charge of 35 nC, and high speed switching
- D2PAK and TO-220 available
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Инженерная поддержка проектов |
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