Описание продукта
The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.
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Отличительные черты |
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Benefits |
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Low Power Loss/High Efficiency
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Small Compact Surface Mountable Package with J-Bent Leads
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Rectangular Package for Automated Handling
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Highly Stable Oxide Passivated Junction
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Guardring for Stress Protection
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This is a Pb-Free Device
Mechanical Characteristics:
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Weight: 70 mg (approximately)
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Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
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Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
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Shipped in 12mm Tape, 5000 Units per 13 inch Reel
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Polarity: Cathode Band Indicated by Polarity Band
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ESD Ratings:
Machine Model = C, Human Body Model = 3B
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Device Meets MSL1 Requirements
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AEC-Q101 Qualified and PPAP Capable
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NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
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Применения |
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End Products |
- Low Voltage, High Frequency Rectification
- Free Wheeling Diodes
- Polarity Diodes
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