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NDBA100N10B: Power MOSFET, 100V, 6.9mΩ, 100A, N-Channel

Overview
Specifications
Datasheet: Power MOSFET, 100V, 6.9mOhm, 100A, N-Channel
Rev. 1 (649kB)
»Показать химический состав
»No Product Change Notifications exist
Product Overview
Описание продукта
This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This devices is suitable for applications with low gate charge driving or ultra low on resistance requirements.
Отличительные черты   Benefits
     
  • Low On-Resistance
 
  • Improves Efficiency by reducing Conduction Losses
  • Low Gate Charge
 
  • Ease of Drive, Faster Turn-on
  • High Speed Switching
 
  • Reduces dynamic power losses
  • 100% Avalanche Tested
 
  • Voltage Overstress Safeguard
  • Pb-Free, Halogen Free and RoHS Compliance
 
  • Environment Friendliness
Применения   End Products
  • Battery Protection
  • Motor Drive
  • Primary Side Switch
  • Secondary Side Synchronous Rectification
 
  • Multi-Cells Battery Pack (ESS, E-Bike, P-Tool)
  • Other Motor
  • Power Supply
Технические информацие
Руководства (1) Спецификацие (1)
Модели - Симуляция (1) Типы корпусов (1)
Наличие и образцы
Продукт
Состояние
Compliance
Описание
Корпус
MSL*
Контейнер
Бюджетная цена единицы
Тип
Размеры
Тип
Кол.
NDBA100N10BT4H Active 
Pb-free
Halide free
Power MOSFET, 100V, 6.9mΩ, 100A, N-Channel D2PAK-3 418AJ 1 Tape and Reel 800 $0.8994
* Уровень чувствительности компонента к влажности
Market Leadtime (weeks) : 8 to 12
Datasheet: Power MOSFET, 100V, 6.9mOhm, 100A, N-Channel
Rev. 1 (649kB)
»Показать химический состав
»No Product Change Notifications exist
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET, 100V, 6.9mΩ, 100A, N-Channel   N-Channel   Single   100   20   4   100   110       8.2     35     400   2,950   1,250   20   D2PAK-3 
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