NDDP010N25AZ: Power MOSFET, 250 V, 10 A, 420 mΩ, Single N-Channel
Описание продукта
This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize input capacitance and gate charge. This devices is suitable for applications with low gate charge driving requirements.
Отличительные черты
Benefits
Reduces dynamic power losses
Ease of drive, faster turn-on
Voltage overstress safeguard
Pb-Free, Halogen Free and RoHS Compliance
Применения
End Products
Battery Protection
Motor Drive
Primary Side Switch
Secondary Side Synchronous Rectification
Multi-Cells Battery Pack (ESS, E-Bike, P-Tool)
Other Motor
Power Supply
Case Outlines
369AJ
369AH
Новые микросхемы
NTP8G202N
:
Power GaN Cascode Transistor, 600 V, 290 mΩ Single N-Channel
Fast switching
Extremely low Qrr
High efficiencies
NDBA180N10B
NDPL180N10B
:
Power N-Channel MOSFETs, 100 V, 180 A
Ultra low on-resistance, as low as 2.8 mΩ
Low gate charge of 95 nC, and high speed switching
D2PAK and TO-220 available
Инженерная поддержка проектов