Low VCE(sat) Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
Отличительные черты
Benefits
High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion
NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
Применения
End Products
Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
Mobile Phones, PDAs, MP3 players, Computers, Power Supplies, Automotive Body Electronics, Toys.