feedback
Rate this webpage

Need
Support?


NTHS4101P: Power MOSFET -20V -6.7A 34 mOhm Single P-Channel ChipFET

Overview
Specifications
Datasheet: Power MOSFET -20 V, -6.7 A, Single P-Channel ChipFET
Rev. 4 (126.0kB)
»Показать данные по надёжности
»Показать химический состав
»Уведомление об обновлениях схем (10)
Product Overview
Описание продукта
Power MOSFET -20 V, -6.7 A, Single P-Channel ChipFET™
Отличительные черты
 
  • Offers an Ultra Low RDS(on) Solution in the ChipFet™ Package
  • Miniature ChipFet™ Package with 40 % Smaller Footprint than TSOP-6, makes it an ideal device for Applications where board space is at a premium.
  • Low Profile (< 1.1 mm) allows it to fit easily into extremely thin environments such as Portable Electronics.
  • Designed to Provide Low RDS(on) at Gate Voltage ( as low as 1.8V). The Operating Voltage used in many Logic ICs in Portable Electronics.
  • Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not required.
  • Operated at Standard Logic Level Gate Drive, Facilitating Future Migrations to Lower Levels using the same Basic Topology.
Применения
  • Optimized for Battery and Load Management Applications in Portable Equipment such as MP3 Players, Cell Phones, Digital Cameras, PDAs, and other Portable Applciations
  • Charge Control in Battery Chargers
  • Buck and Boost Converters
Технические информацие
Статьи по применению (3) Спецификацие (1)
Модели - Симуляция (4) Типы корпусов (1)
Наличие и образцы
Продукт
Состояние
Compliance
Описание
Корпус
MSL*
Контейнер
Бюджетная цена единицы
Тип
Размеры
Тип
Кол.
NTHS4101PT1G Active
Pb-free
Halide free
Power MOSFET -20V -6.7A 34 mOhm Single P-Channel ChipFET ChipFET-8 1206A-03 1 Tape and Reel 3000 $0.18
* Уровень чувствительности компонента к влажности
Market Leadtime (weeks) : 4 to 8
Digikey   (2015-07-09) : >10K
Mouser   (2015-07-09) : >10K
PandS   (2015-07-09) : >1K
Datasheet: Power MOSFET -20 V, -6.7 A, Single P-Channel ChipFET
Rev. 4 (126.0kB)
»Показать данные по надёжности
»Показать химический состав
»Уведомление об обновлениях схем (10)
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET -20V -6.7A 34 mOhm Single P-Channel ChipFET   P-Channel   Single   20   8   1.5   6.7   2.5   40   34     25     7     2100   290   200   ChipFET-8 
Ранее просмотренные схемы
Очистить список

Новые микросхемы
 

NDBA100N10B  NDPL100N10B  Power N-Channel MOSFETs, 100 V, 100 A

  • Low on-resistance as low as 6.9 mΩ
  • Low gate charge of 35 nC, and high speed switching
  • D2PAK and TO-220 available

NTP8G206N  Power GaN Cascode Transistor, 600 V, 150 mΩ Single N-Channel

  • Fast switching
  • Extremely low Qrr
  • High efficiencies