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NTLJS3A18PZ: Power MOSFET -20V -8.2A 18 mOhm Single P-Channel WDFN6 with ESD Protection

Overview
Specifications
Datasheet: Power MOSFET, -20 V, -8.2 A, uCool, Single P-Channel, 2.0x2.0x0.8 mm WDFN Package
Rev. 0 (128.0kB)
»Показать химический состав
»No Product Change Notifications exist
Product Overview
Описание продукта
Power MOSFET, -20 V, -8.2 A, uCool, Single P-Channel, 2.0x2.0x0.8 mm WDFN Package
Отличительные черты   Benefits
     
  • WDFN Package with Exposed Drain Pads
 
  • Excellent Thermal
    Conduction
  • Low Profile WDFN (2.0x2.0x0.8 mm)
 
  • Board Space Saving
  • Ultra Low RDS(on)
 
  • Improve System Efficiency
  • ESD Diode Protected Gate
   
Применения   End Products
  • Optimized for Power Management Applications for Portable
    Products, such as Smart Phones, Media Tablets, PMP, DSC, GPS, and
    Others
  • Battery Switch
  • High Side Load Switch
 
  • Portable
    Products, such as Smart Phones, Media Tablets, PMP, DSC, GPS, and
    Others
Технические информацие
Модели - Симуляция (2) Типы корпусов (1)
Спецификацие (1)  
Наличие и образцы
Продукт
Состояние
Compliance
Описание
Корпус
MSL*
Контейнер
Бюджетная цена единицы
Тип
Размеры
Тип
Кол.
NTLJS3A18PZTWG Active
Pb-free
Halide free
Power MOSFET -20V -8.2A 18 mOhm Single P-Channel WDFN6 with ESD Protection WDFN-6 506AP 1 Tape and Reel 10000 $0.3333
NTLJS3A18PZTXG Active
Pb-free
Halide free
Power MOSFET -20V -8.2A 18 mOhm Single P-Channel WDFN6 with ESD Protection WDFN-6 506AP 1 Tape and Reel 10000 $0.3333
* Уровень чувствительности компонента к влажности
Market Leadtime (weeks) : Contact Factory
Market Leadtime (weeks) : Contact Factory
Avnet   (2015-07-09) : >1K
Datasheet: Power MOSFET, -20 V, -8.2 A, uCool, Single P-Channel, 2.0x2.0x0.8 mm WDFN Package
Rev. 0 (128.0kB)
»Показать химический состав
»No Product Change Notifications exist
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET -20V -8.2A 18 mOhm Single P-Channel WDFN6 with ESD Protection   P-Channel   Single   20   8   1   8.4   3.4   25   18     28     8.8   12   2240   240   210   WDFN-6 
 Pb-free 
 Halide free 
 Active     Power MOSFET -20V -8.2A 18 mOhm Single P-Channel WDFN6 with ESD Protection   P-Channel   Single   20   8   1   8.4   3.4   25   18     28     8.8   12   2240   240   210   WDFN-6 
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