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NVMFD5853N: Power MOSFET 40V, 53A, 10 mOhm, Dual N-Channel, SO8-FL, Logic Level.

Overview
Specifications
Datasheet: Power MOSFET 40 V, 10 mOhm, 53 A, Dual N−Channel SO-8FL
Rev. 0 (124.0kB)
»Показать химический состав
»No Product Change Notifications exist
Product Overview
Описание продукта
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Отличительные черты   Benefits
     
  • Small Footprint (5x6 mm)
 
  • Reduced board space, smaller modules
  • Low RDS(on)
 
  • Minimize Conduction Losses
  • Low Capacitance
 
  • Minimize Driver Losses
  • NVMFD5853NWF Wettable Flanks Product
 
  • Facilitates Automated Optical Inspection
  • AEC-Q101 Qualified and PPAP Capable
 
  • Suitable for use in automotive applications
  • Standard Gate Level (VTH min. = 2 V)
 
  • Ensures turn off in noisy environments (motor control)
Применения   End Products
  • Motor Control
 
  • Engine control module
  • Body control module
  • Chassis control module
Технические информацие
Статьи по применению (1) Типы корпусов (1)
Спецификацие (1)  
Наличие и образцы
Продукт
Состояние
Compliance
Описание
Корпус
MSL*
Контейнер
Бюджетная цена единицы
Тип
Размеры
Тип
Кол.
NVMFD5853NT1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 40V, 53A, 10 mOhm, Dual N-Channel, SO8-FL, Logic Level. SO-8FL Dual / DFN-8 506BT 1 Tape and Reel 1500 $0.4738
NVMFD5853NWFT1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 40V, 53A, 10 mOhm, Dual N-Channel, SO8-FL, Logic Level. SO-8FL Dual / DFN-8 506BT 1 Tape and Reel 1500 $0.4911
* Уровень чувствительности компонента к влажности
Market Leadtime (weeks) : Contact Factory
Avnet   (2015-07-09) : >1K
Market Leadtime (weeks) : Contact Factory
Avnet   (2015-07-09) : >1K
Datasheet: Power MOSFET 40 V, 10 mOhm, 53 A, Dual N−Channel SO-8FL
Rev. 0 (124.0kB)
»Показать химический состав
»No Product Change Notifications exist
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 40V, 53A, 10 mOhm, Dual N-Channel, SO8-FL, Logic Level.   N-Channel   Dual   40   20   4   53   37       10     24   6.6   9   1225   1250   100   SO-8FL Dual / DFN-8 
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 40V, 53A, 10 mOhm, Dual N-Channel, SO8-FL, Logic Level.   N-Channel   Dual   40   20   4   53   37       10     24   6.6   9   1225   1250   100   SO-8FL Dual / DFN-8 
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