NVMFD5877NL: Power MOSFET 60V, 17A, 39 mOhm, Dual N-Channel, SO8-FL, Logic Level.
Описание продукта
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Отличительные черты
Benefits
Minimal conduction losses
Safeguard against voltage overstress failures
Suitable for automotive applications
Применения
End Products
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
NVMFD5877NLT1G
AEC Qualified
PPAP Capable
Pb-free
Halide free
Active
Power MOSFET 60V, 17A, 39 mOhm, Dual N-Channel, SO8-FL, Logic Level.
N-Channel
Dual
60
20
3
17
23
60
39
5.9
11
2.8
11
540
55
36
SO-8FL Dual / DFN-8
NVMFD5877NLT3G
AEC Qualified
PPAP Capable
Pb-free
Halide free
Active
Power MOSFET 60V, 17A, 39 mOhm, Dual N-Channel, SO8-FL, Logic Level.
N-Channel
Dual
60
20
3
17
23
60
39
5.9
11
2.8
11
540
55
36
SO-8FL Dual / DFN-8
NVMFD5877NLWFT1G
AEC Qualified
PPAP Capable
Pb-free
Halide free
Active
Power MOSFET 60V, 17A, 39 mOhm, Dual N-Channel, SO8-FL, Logic Level.
N-Channel
Dual
60
20
3
17
23
60
39
5.9
11
2.8
11
540
55
36
SO-8FL Dual / DFN-8
NVMFD5877NLWFT3G
AEC Qualified
PPAP Capable
Pb-free
Halide free
Active
Power MOSFET 60V, 17A, 39 mOhm, Dual N-Channel, SO8-FL, Logic Level.
N-Channel
Dual
60
20
3
17
23
60
39
5.9
11
2.8
11
540
55
36
SO-8FL Dual / DFN-8
Case Outlines
506BT
Packages
Новые микросхемы
NDBA100N10B
NDPL100N10B
:
Power N-Channel MOSFETs, 100 V, 100 A
Low on-resistance as low as 6.9 mΩ
Low gate charge of 35 nC, and high speed switching
D2PAK and TO-220 available
NDBA180N10B
NDPL180N10B
:
Power N-Channel MOSFETs, 100 V, 180 A
Ultra low on-resistance, as low as 2.8 mΩ
Low gate charge of 95 nC, and high speed switching
D2PAK and TO-220 available
Инженерная поддержка проектов